Cmos image sensor structure with ir/nir integration

ABSTRACT

A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

BACKGROUND

Semiconductor image sensors are operated to sense light. Typically, thesemiconductor image sensors include complementarymetal-oxide-semiconductor (CMOS) image sensors (CIS) and charge-coupleddevice (CCD) sensors, which are widely used in various applications suchas digital still camera (DSC), mobile phone camera, digital video (DV)and digital video recorder (DVR) applications. These semiconductor imagesensors utilize an array of image sensor elements, each image sensorelement including a photodiode and other elements, to absorb light andconvert the sensed light into digital data or electrical signals.

As a trend of electronic products including image sensors, such asdigital cameras, is developed toward better and better image quality,the image sensors with better image quality are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is schematic top view of a semiconductor device in accordancewith various embodiments.

FIG. 1B is schematic cross-sectional view taken along line A-A of FIG.1A.

FIG. 2A through FIG. 2D are schematic cross-sectional views ofintermediate stages showing a method for manufacturing a semiconductordevice in accordance with various embodiments.

FIG. 3 is a flow chart of a method for manufacturing a semiconductordevice in accordance with various embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact.

Terms used herein are only used to describe the specific embodiments,which are not used to limit the claims appended herewith. For example,unless limited otherwise, the term “one” or “the” of the single form mayalso represent the plural form. The terms such as “first” and “second”are used for describing various devices, areas and layers, etc., thoughsuch terms are only used for distinguishing one device, one area or onelayer from another device, another area or another layer. Therefore, thefirst area can also be referred to as the second area without departingfrom the spirit of the claimed subject matter, and the others arededuced by analogy. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.

IR or NIR will bias colors of images, so in some photography situations,IR and NIR effects need to be eliminated. Typically, an IR cut techniqueis used to eliminate the IR and NIR effects by additionally installingoptical lenses or IR shutters in electronic products. However, as theelectronic products keep shrinking down, it is more difficult tointegrate the optical lenses or the IR shutters into the electronicproducts. On the other hand, in certain applications, such as proximityimage sensors and motion image sensors, an IR function is necessary forthe electronic products. However, for such electronic products, it needsone or more chips to obtain the IR function, thereby increasing sizes ofthe electronic products.

Embodiments of the present disclosure are directed to providing asemiconductor device and a method for manufacturing the semiconductordevice, in which image pixels with an infrared radiation cut layer andat least one IR pixel are integrated into a unit cell or a single chipfor an image sensor, thereby significantly improving the bias of colorsof images sensed by the image sensor, and decreasing the size of animage module including the image sensor with an IR cut function.Furthermore, the image sensor may be used in various applications, suchas a proximity sensor and a motion sensor.

FIG. 1A is schematic top view of a semiconductor device in accordancewith various embodiments. In some embodiments, a semiconductor device100 is a CMOS image sensor device, which may be operated for sensingincident light 101. The semiconductor device 100 has a front side 103and a back side 105. In the embodiments, the semiconductor device 100 isa back-side illuminated (BSI) CMOS image sensor device, which isoperated to sense the incident light 101 projected from its back side105. The semiconductor device 100 may include various image pixels andat least one IR pixel. For example, as shown in FIG. 1A, thesemiconductor device 100 includes three image pixels 102, 104 and 106and one IR pixel 108. The semiconductor device 100 may be a RGB imagesensor system, and the image pixels 102, 104 and 106 may be respectivelya red image pixel, a green image pixel and a blue image pixel. Incertain examples, the semiconductor device 100 may be a RGBC imagesensor system, and image pixels of the semiconductor device 100 mayinclude a red image pixel, a green image pixel, a blue image pixel and aclear image pixel. In the semiconductor device 100, the image pixels102, 104 and 106 and the IR pixel 108 are adjacent to each other. Insome examples, the image pixels 102, 104 and 106 and the IR pixel 108are arranged in an array.

Referring to FIG. 1A and FIG. 1B, FIG. 1B is schematic cross-sectionalview taken along line A-A of FIG. 1A. As shown in FIG. 1A and FIG. 1B,the semiconductor device 100 includes a substrate 110, various lightsensing devices 112, at least one infrared radiation sensing device 114,a transparent insulating layer 116, an infrared radiation cut layer 118,a color filter layer 120 and an infrared radiation color filter layer122.

In some examples, the substrate 110 includes a carrier 124, a dielectriclayer 126 and a semiconductor layer 128. The carrier 124 may be asemiconductor carrier. For example, the carrier 124 is composed of asingle-crystalline semiconductor material or a compound semiconductormaterial. In some exemplary examples, the carrier 124 is formed fromsilicon, germanium or glass. The semiconductor layer 128 has a firstsurface 130 and a second surface 132, which are respectively located onopposite sides of the semiconductor layer 128. The semiconductor layer128 overlies the carrier 124, and the first surface 130 faces thecarrier 124. In some examples, the semiconductor layer 128 is formedfrom epitaxial silicon and/or epitaxial germanium. A thickness of thesemiconductor layer 128 may be greater than about 3 micrometers. Thedielectric layer 126 is disposed between the carrier 124 and the firstsurface 130 of the semiconductor layer 128. The dielectric layer 126 maybe formed from silicon oxide, silicon nitride or silicon oxynitride.

The light-sensing devices 112 are operated to sense visible light of theincident light 101, and the infrared radiation sensing device 114 isoperated to sense IR and/or NIR of the incident light 101. In someexamples, each of light-sensing devices 112 and the infrared radiationsensing device 114 includes an image sensor element, in which the imagesensor element includes a photodiode and other elements. In thesemiconductor device 100, each of the image pixels 102, 104 and 106includes one light sensing device 112, and each IR pixel 108 includesone infrared radiation sensing device 114. Hence, the semiconductordevice 100 illustrated in FIG. 1A includes three light sensing devices112 and one infrared radiation sensing device 114. The light sensingdevices 112 and the infrared radiation sensing device 114 are disposedin the substrate 110, and are adjacent to each other. For example, thelight sensing devices 112 and the infrared radiation sensing device 114are arranged in an array. In some examples, as shown in FIG. 1B, thelight sensing devices 112 and the infrared radiation sensing device 114are disposed on the first surface 130 of the semiconductor layer 128,and the dielectric layer 126 covers the light sensing devices 112 andthe infrared radiation sensing device 114. The dielectric layer 126 canbe used as a passivation layer and is suitable to protect thelight-sensing devices 112, the infrared radiation sensing device 114 andthe semiconductor layer 128 from being damaged.

The transparent insulating layer 116 is disposed on the substrate 110and overlies the light sensing devices 112 and the infrared radiationsensing device 114. In some examples, as shown in FIG. 1A, thetransparent insulating layer 116 is disposed on the second surface 132of the semiconductor layer 128, i.e. the transparent insulating layer116 and the dielectric layer 126 are on opposite sides of thesemiconductor layer 128. For example, the transparent insulating layer116 is formed from silicon dioxide, silicon nitride or siliconoxynitride. In certain examples, the semiconductor device 100 mayfurther include another transparent insulating layer 134 for meetingprocess requirements, in which the transparent insulating layer 134 isdisposed between the transparent insulating layer 116 and the secondsurface 132 of the semiconductor layer 128. The transparent insulatinglayer 134 may be formed from silicon dioxide, silicon nitride or siliconoxynitride.

The infrared radiation cut layer 118 is disposed on the transparentinsulating layer 116 and overlies the light sensing devices 112. Theinfrared radiation cut layer 118 is suitable for filtering out infraredradiation and/or near infrared radiation which is projected toward thelight sensing devices 112, in which the infrared radiation cut layer 118filters out infrared radiation and/or near infrared radiation byrefracting and/or diffracting. In some examples, the infrared radiationcut layer 118 includes various first dielectric layers 136 and varioussecond dielectric layers 138, in which the first dielectric layers 136and the second dielectric layers 138 are alternately stacked with eachother, and a dielectric constant of the first dielectric layers 136 isdifferent from a dielectric constant of the second dielectric layers138. In some exemplary examples, the first dielectric layers 136 areformed from silicon nitride, and the second dielectric layers 138 areformed from silicon dioxide. The first dielectric layers 136 and thesecond dielectric layers 138 may be formed from different organicmaterials. In some exemplary examples, a thickness of the infraredradiation cut layer 118 is smaller than about 1 micrometer for keepingsufficient light absorption of the light sensing devices 112.

With the infrared radiation cut layer 118 disposed over the lightsensing devices 112, the infrared radiation and/or near infraredradiation projected toward the light sensing devices 112 can be filteredout without needing to use any additional optical lens or IR shutter.Thus, colors of images sensed by the light sensing devices 112 are notaffected by the infrared radiation and/or near infrared radiation,thereby enhancing image quality of the semiconductor device 100.

The color filter layer 120 is disposed on the infrared radiation cutlayer 118 over the light sensing devices 112, in which the color filterlayer 120 includes various color filter portions. For example, referringto FIG. 1A and FIG. 1B simultaneously, the semiconductor device 100includes the image pixels 102, 104 and 106, and the color filter layer120 includes color filter portions 120 a, 120 b and 120 c, which arerespectively disposed in the image pixels 102, 104 and 106 andcorrespondingly cover the light sensing devices 112 in the image pixels102, 104 and 106. In some exemplary examples, the image pixels 102, 104and 106 are respectively a red image pixel, a green image pixel and ablue image pixel, and the color filter portions 120 a, 120 b and 120 care respectively a red color filter portion, a green color filterportion and a blue color filter portion. The light sensing devices 112in the image pixels 102, 104 and 106 can respectively receive theradiations which have been respectively filtered by the color filterportions 120 a, 120 b and 120 c and have been IR filtered by theinfrared radiation cut layer 118.

The infrared radiation color filter layer 122 is disposed on thetransparent insulating layer 116 in the IR pixel 108, and covers theinfrared radiation sensing device 114. The infrared radiation sensingdevice 114 in the IR pixel 108 can receive the radiations which havebeen respectively filtered by the infrared radiation color filter layer122. In some examples, the infrared radiation color filter layer 122 isadjacent to the stacked structure composed of the infrared radiation cutlayer 118 and the color filter layer 120. A top surface 142 of theinfrared radiation color filter layer 122 may be substantially levelwith a top surface 140 of the color filter layer 120.

With the IR pixel 108 including the infrared radiation color filterlayer 122 and the infrared radiation sensing device 114, thesemiconductor device 100 can provide an IR function without needing touse any additional chip for achieving the IR function. Thus, the size ofan image sensor module can be decreased.

As shown in FIG. 1B, the semiconductor device 100 may optionally includea negatively charged optical layer 144 which is disposed between thesubstrate 110 and the transparent insulating layer 116. In someexamples, the negatively charged optical layer 144 is disposed betweenthe second surface 132 of the semiconductor layer 128 of the substrate110 and the transparent insulating layer 134. The negatively chargedoptical layer 144 is a layer including negative charges, in which thenegative charges can be coupled with leakage current occurring near thesecond surface 132 of the semiconductor layer 128, such that the leakagecurrent can be reduced or eliminated by the negatively charged opticallayer 144. Furthermore, with the negatively charged optical layer 144,the amount of light entering the semiconductor layer 128 is increased.The negatively charged optical layer 144 may include two or more kindsof dielectric layers which are alternately stacked with each other, inwhich dielectric constants of the kinds of the dielectric layers aredifferent. In some examples, the negatively charged optical layer 144 isformed from a dielectric material having a high dielectric constant,such as hafnium dioxide (HaO₂), tantalum pentoxide (Ta₂O₅), titaniumdioxide (TiO₂) and aluminum oxide (Al₂O₃).

Referring to FIG. 1B again, the semiconductor device 100 may optionallyinclude a grid layer 146 which is disposed in the transparent insulatinglayer 116. The grid layer 146 is located between the image pixels 102,104 and 106 and between the IR pixel 108 and the image pixels 102, 104and 106. Thus, the grid layer 146 is located between the light sensingdevices 112 in the image pixels 102, 104 and 106 the and between theinfrared radiation sensing device 114 in the IR pixel 108 and the lightsensing devices 112 in the image pixels 102, 104 and 106. In someexamples, the grid layer 146 passes through the transparent insulatinglayer 116. In certain examples, the grid layer 146 may not penetratethrough the transparent insulating layer 116. The grid layer 146 issuitable for blocking light from being reflected or refracted to theadjacent pixels. In some exemplary examples, the grid layer is formedform tungsten (W) or aluminum-copper alloy (A1Cu).

Referring to FIG. 2A through FIG. 2D, FIG. 2A through FIG. 2D areschematic cross-sectional views of intermediate stages showing a methodfor manufacturing a semiconductor device in accordance with variousembodiments. As shown in FIG. 2A, a substrate 200 is provided. In someexamples, the substrate 200 includes a carrier 202, a dielectric layer204 and a semiconductor layer 206. The carrier 202 may be composed of asemiconductor material, such as a single-crystalline semiconductormaterial or a compound semiconductor material. In some exemplaryexamples, the carrier 202 is formed from silicon, germanium or glass.

The semiconductor layer 206 has a first surface 208 and a second surface210 opposite to the first surface 208. The semiconductor layer 206 isformed over the carrier 202 by using, for example, a bonding technique.The operation of forming the semiconductor layer 206 is performed toform the semiconductor layer 206 having the first surface 208 facing thecarrier 202. In some examples, the operation of forming thesemiconductor layer 206 includes forming the semiconductor layer 206from epitaxial silicon and/or epitaxial germanium. In some exemplaryexamples, the operation of forming the semiconductor layer 206 isperformed to form the semiconductor layer 206 having a thickness whichis greater than about 3 micrometers. The dielectric layer 204 is formedbetween the carrier 202 and the first surface 208 of the semiconductorlayer 206 using a deposition technique, such as a chemical vapordeposition (CVD) technique. In some exemplary examples, the operation offorming the dielectric layer 204 includes forming the dielectric layer204 from silicon oxide, silicon nitride or silicon oxynitride.

Various light-sensing devices 212 and at least one infrared radiationsensing device 214 are formed in the substrate 200, in which thelight-sensing devices 212 are formed for image pixels, and the infraredradiation sensing device 214 is formed for an IR pixel. The lightsensing devices 212 and the infrared radiation sensing device 214 areadjacent to each other. For example, the light sensing devices 212 andthe infrared radiation sensing device 214 are arranged in an array. Thelight-sensing devices 212 are operated to sense visible light ofincident light, and the infrared radiation sensing device 214 isoperated to sense IR and/or NIR of the incident light. In some examples,each of light-sensing devices 212 and the infrared radiation sensingdevice 214 includes an image sensor element, in which the image sensorelement includes a photodiode and other elements.

In some examples, in the operation of providing the substrate 200 andthe operation of forming the light-sensing devices 212 and the infraredradiation sensing device 214, the light-sensing devices 212 and theinfrared radiation sensing device 214 are firstly formed on the firstsurface 208 of the semiconductor layer 206, and the dielectric layer 204is formed to cover the light-sensing devices 212, the infrared radiationsensing device 214 and the first surface 208 of the semiconductor layer206, and the carrier 202 is bonded to the dielectric layer 204. Afterthe dielectric layer 204 is deposited, a planarization operation may beoptionally performed to planarize the dielectric layer 204. Thedielectric layer 204 is planarized, so that the carrier 202 can besuccessfully bonded to the dielectric layer 204. The planarizationoperation may be performed using a chemical mechanical polishing (CMP)technique. The dielectric layer 204 can be used as a passivation layerand is suitable to protect the light-sensing devices 212, the infraredradiation sensing device 214 and the semiconductor layer 206 from beingdamaged.

After the light-sensing devices 212 and the infrared radiation sensingdevice 214 are formed in the substrate 200, a transparent insulatinglayer 216 is formed on the substrate 200 and overlies the light sensingdevices 212 and the infrared radiation sensing device 214. In someexamples, the transparent insulating layer 216 is formed on the secondsurface 210 of the semiconductor layer 206. The operation of forming thetransparent insulating layer 216 may be performed using a chemical vapordeposition technique. In some exemplary examples, the operation offorming the transparent insulating layer 216 includes forming thetransparent insulating layer 216 from silicon dioxide, silicon nitrideor silicon oxynitride.

Optionally, before the operation of forming the transparent insulatinglayer 216, another transparent insulating layer 218 may be formed on thesubstrate 200 overlying the light sensing devices 212 and the infraredradiation sensing device 214, and then the transparent insulating layer216 may be formed on the transparent insulating layer 218, i.e. thetransparent insulating layer 218 may be disposed between the transparentinsulating layer 216 and the second surface 210 of the semiconductorlayer 206. The operation of forming the transparent insulating layer 218may be performed using a chemical vapor deposition technique. In someexemplary examples, the operation of forming the transparent insulatinglayer 218 includes forming the transparent insulating layer 218 fromsilicon dioxide, silicon nitride or silicon oxynitride.

In some examples, before the operation of forming the transparentinsulating layer 216, a negatively charged optical layer 220 may beoptionally formed on the substrate 200 overlying the light sensingdevices 212 and the infrared radiation sensing device 214, so that thenegatively charged optical layer 220 may be disposed between thesubstrate 200 and the transparent insulating layer 216. In certainexamples, the operation of forming the negatively charged optical layer220 is performed to form the negatively charged optical layer 220between the second surface 210 of the semiconductor layer 206 of thesubstrate 200 and the transparent insulating layer 218. The operation offorming the negatively charged optical layer 220 may be performed usinga chemical vapor deposition technique. In some exemplary examples, theoperation of forming the negatively charged optical layer 220 isperformed to form the negatively charged optical layer 220 including twoor more kinds of dielectric layers alternately stacked with each other,in which dielectric constants of the kinds of the dielectric layers aredifferent. For example, the operation of forming the negatively chargedoptical layer 220 may be performed to form the negatively chargedoptical layer 220 from a dielectric material having a high dielectricconstant, such as hafnium dioxide, tantalum pentoxide, titanium dioxideand aluminum oxide.

The negatively charged optical layer 220 is formed to include variousnegative charges. The negative charges can be coupled with leakagecurrent occurred near the second surface 210 of the semiconductor layer206, so that the leakage current can be reduced or eliminated by thenegatively charged optical layer 220. Furthermore, with the negativelycharged optical layer 220, an amount of light entering the semiconductorlayer 206 is increased.

Optionally, as shown in FIG. 2A, after the transparent insulating layer216 is formed, a grid layer 222 may be formed in the transparentinsulating layer 216 for blocking light from being reflected orrefracted to adjacent pixels. The operation of forming the grid layer222 is performed to form the grid layer 222 between the light sensingdevices 212 and between the infrared radiation sensing device 214 andthe light sensing devices 212. In some examples, the grid layer 222 isformed to pass through the transparent insulating layer 216. In certainexamples, the grid layer 222 may not penetrate through the transparentinsulating layer 216. The operation of forming the grid layer 222 mayinclude forming the grid layer 222 from tungsten or aluminum-copperalloy.

As shown in FIG. 2B, an infrared radiation cut layer 224 is formed onthe transparent insulating layer 216 overlying the light sensing devices212 and the infrared radiation sensing device 214 for filtering outinfrared radiation and/or near infrared radiation. In some examples, theoperation of the infrared radiation cut layer 224 is performed to formthe infrared radiation cut layer 224 including various first dielectriclayers 226 and various second dielectric layers 228. The firstdielectric layers 226 and the second dielectric layers 228 are formed tobe alternately stacked with each other, in which a dielectric constantof the first dielectric layers 226 is different from a dielectricconstant of the second dielectric layers 228. For example, the operationof forming the first dielectric layers 226 includes forming the firstdielectric layers 226 from silicon nitride, and the operation of formingthe second dielectric layers 228 includes forming the second dielectriclayers 228 from silicon dioxide. The operation of forming the firstdielectric layers 226 and the second dielectric layers 228 may includeforming the first dielectric layers 226 and the second dielectric layers228 from different organic materials. In some exemplary examples, theoperation of forming the infrared radiation cut layer 224 is performedto form the infrared radiation cut layer 224 having a thickness which issmaller than about 1 micrometer.

As shown in FIG. 2C, a portion of the infrared radiation cut layer 224overlying the infrared radiation sensing device 214 is removed to exposea portion 230 of the transparent insulating layer 216. Thus, after theoperation of removing the portion of the infrared radiation cut layer224 is performed, the other portion of the infrared radiation cut layer224 only remains over the light sensing devices 212 in the image pixels.In some examples, the operation of removing the portion of the infraredradiation cut layer 224 is performed using a photolithography techniqueand an etching technique. By forming the infrared radiation cut layer224 over the light sensing devices 212 in the image pixels, the infraredradiation and/or near infrared radiation projected toward the lightsensing devices 212 can be filtered out without needing to use anyadditional optical lens or IR shutter. Thus, colors of images sensed bythe light sensing devices 212 are not biased by the infrared radiationand/or near infrared radiation, thereby enhancing image quality.

Referring to FIG. 2C again, after the portion of the infrared radiationcut layer 224 overlying the infrared radiation sensing device 214 isremoved, a color filter layer 232 is formed on the other portion of theinfrared radiation cut layer 232 by, for example, a depositiontechnique. The color filter layer 224 includes various color filterportions respectively disposed in the image pixels, i.e. each imagepixel includes one color filter portion. For example, for a RGB imagesensor system, the operation of forming the color filter layer 232 isperformed to form the color filter layer 232 including at least one redcolor filter portion, at least one green color filter portion and atleast one blue color filter portion. For a RGBC image sensor system, theoperation of forming the color filter layer 232 is performed to form thecolor filter layer 232 including at least one red color filter portion,at least one green color filter portion, at least one blue color filterportion and at least one clear portion. The light sensing devices 212can respectively receive the radiations which have been respectivelyfiltered by the color filter portions of the color filter layer 232 andhave been IR filtered by the infrared radiation cut layer 224.

As shown in FIG. 2D, an infrared radiation color filter layer 236 isformed on the portion of the transparent insulating layer 216 overlyingthe infrared radiation sensing device 214, i.e. the infrared radiationcolor filter layer 236 is formed in the IR pixel and covers the infraredradiation sensing device 214, so as to complete a semiconductor device240. In some examples, the operation of forming the infrared radiationcolor filter layer 236 is performed to form the infrared radiation colorfilter layer 236 which is adjacent to the stacked structure composed ofthe infrared radiation cut layer 224 and the color filter layer 232. Theoperation of forming the infrared radiation color filter layer 236 isperformed to form the infrared radiation color filter layer 236 having atop surface 238 which may be substantially level with a top surface 234of the color filter layer 232. In some examples, the operation offorming the color filter layer 232 may be performed after the operationof forming the infrared radiation color filter layer 236.

By integrating the IR pixel including the infrared radiation colorfilter layer 236 and the infrared radiation sensing device 214 with theimage pixels including the infrared radiation cut layer 224 and thelight sensing devices 212, the semiconductor device 240 can provide anIR function without needing to use any additional chip for achieving theIR function. Thus, the size of an image sensor module including thesemiconductor device 240 can be decreased.

Referring to FIG. 3 with FIG. 2A through FIG. 2D, FIG. 3 is a flow chartof a method for manufacturing a semiconductor device in accordance withvarious embodiments. The method begins at operation 300, where asubstrate 200 is provided. In some examples, the operation of providingthe substrate 200 is performed to provide the substrate 200 including acarrier 202, a dielectric layer 204 and a semiconductor layer 206. Thesemiconductor layer 206 has a first surface 208 and a second surface210, in which the first surface 208 is opposite to the second surface210 and faces the carrier 202. The semiconductor layer 206 is formedover the carrier 202 by using, for example, a bonding technique. Athickness of the semiconductor layer 206 may be, for example, greaterthan about 3 micrometers. The dielectric layer 204 is formed between thecarrier 202 and the first surface 208 of the semiconductor layer 206using a deposition technique, such as a chemical vapor depositiontechnique.

At operation 302, referring to FIG. 2A again, various light-sensingdevices 212 and at least one infrared radiation sensing device 214 areformed in the substrate 200, in which the light-sensing devices 212 areformed for image pixels, and the infrared radiation sensing device 214is formed for an IR pixel. The light sensing devices 212 and theinfrared radiation sensing device 214 are adjacent to each other. Forexample, the light sensing devices 212 and the infrared radiationsensing device 214 are arranged in an array. In some examples, each oflight-sensing devices 212 and the infrared radiation sensing device 214includes an image sensor element, in which the image sensor elementincludes a photodiode and other elements.

In some examples, at the operations 302 and 304, the light-sensingdevices 212 and the infrared radiation sensing device 214 are firstlyformed on the first surface 208 of the semiconductor layer 206, and thedielectric layer 204 is formed to cover the light-sensing devices 212,the infrared radiation sensing device 214 and the first surface 208 ofthe semiconductor layer 206, and the carrier 202 is then bonded to thedielectric layer 204. After the dielectric layer 204 is deposited, aplanarization operation may be optionally performed to planarize thedielectric layer 204 using, for example, a chemical mechanical polishingtechnique.

At operation 304, a transparent insulating layer 216 is formed on thesecond surface 210 of the semiconductor layer 206 of the substrate 200overlying the light sensing devices 212 and the infrared radiationsensing device 214 using, for example, a chemical vapor depositiontechnique. In certain examples, another transparent insulating layer 218may be optionally formed on the substrate 200 overlying the lightsensing devices 212 and the infrared radiation sensing device 214, andthen the transparent insulating layer 216 may be formed on thetransparent insulating layer 218. The operation of forming thetransparent insulating layer 218 may be performed using a chemical vapordeposition technique.

In some examples, before the operation of forming the transparentinsulating layer 216, a negatively charged optical layer 220 may beoptionally formed on the substrate 200 overlying the light sensingdevices 212 and the infrared radiation sensing device 214, so that thenegatively charged optical layer 220 may be disposed between the secondsurface 210 of the semiconductor layer 206 of the substrate 200 and thetransparent insulating layer 216. The operation of forming thenegatively charged optical layer 220 may be performed using a chemicalvapor deposition technique. The operation of forming the negativelycharged optical layer 220 may be performed to form the negativelycharged optical layer 220 including two or more kinds of dielectriclayers alternately stacked with each other, in which dielectricconstants of the kinds of the dielectric layers are different. Theoperation of forming the negatively charged optical layer 220 may beperformed to form the negatively charged optical layer 220 from adielectric material having a high dielectric constant, such as hafniumdioxide, tantalum pentoxide, titanium dioxide and aluminum oxide.

Optionally, as shown in FIG. 2A, a grid layer 222 may be formed in thetransparent insulating layer 216 between the light sensing devices 212and between the infrared radiation sensing device 214 and the lightsensing devices 212 for blocking light from being reflected or refractedto adjacent pixels. In some examples, the grid layer 222 is formed topass through the transparent insulating layer 216. In certain examples,the grid layer 222 may not penetrate through the transparent insulatinglayer 216. The operation of forming the grid layer 222 may includeforming the grid layer 222 from tungsten or aluminum-copper alloy.

At operation 306, as shown in FIG. 2B, an infrared radiation cut layer224 is formed on the transparent insulating layer 216 overlying thelight sensing devices 212 and the infrared radiation sensing device 214for filtering out infrared radiation and/or near infrared radiation. Insome examples, the operation of the infrared radiation cut layer 224 isperformed to form the infrared radiation cut layer 224 including variousfirst dielectric layers 226 and various second dielectric layers 228alternately stacked with each other, in which a dielectric constant ofthe first dielectric layers 226 is different from a dielectric constantof the second dielectric layers 228. For example, the operation offorming the first dielectric layers 226 includes forming the firstdielectric layers 226 from silicon nitride, and the operation of formingthe second dielectric layers 228 includes forming the second dielectriclayers 228 from silicon dioxide. The operation of forming the firstdielectric layers 226 and the second dielectric layers 228 may includeforming the first dielectric layers 226 and the second dielectric layers228 from different organic materials. The operation of forming theinfrared radiation cut layer 224 may be performed to form the infraredradiation cut layer 224 having a thickness which is smaller than about 1micrometer.

At operation 308, as shown in FIG. 2C, a portion of the infraredradiation cut layer 224 overlying the infrared radiation sensing device214 is removed to expose a portion 230 of the transparent insulatinglayer 216 and to remain the other portion of the infrared radiation cutlayer 224 over the light sensing devices 212 in the image pixels. Insome examples, the operation of removing the portion of the infraredradiation cut layer 224 is performed using a photolithography techniqueand an etching technique. By forming the infrared radiation cut layer224 over the light sensing devices 212 in the image pixels, the infraredradiation and/or near infrared radiation projected toward the lightsensing devices 212 can be filtered out without needing to use anyadditional optical lens or IR shutter, thereby preventing colors ofimages sensed by the light sensing devices 212 from being biased by theinfrared radiation and/or near infrared radiation.

At operation 310, referring to FIG. 2C again, a color filter layer 232is formed on the other portion of the infrared radiation cut layer 232by, for example, a deposition technique. The color filter layer 224includes various color filter portions respectively disposed in theimage pixels. For example, the operation of forming the color filterlayer 232 is performed to form the color filter layer 232 including atleast one red color filter portion, at least one green color filterportion and at least one blue color filter portion. In certain examples,the operation of forming the color filter layer 232 is performed to formthe color filter layer 232 including at least one red color filterportion, at least one green color filter portion, at least one bluecolor filter portion and at least one clear portion.

At operation 312, as shown in FIG. 2D, an infrared radiation colorfilter layer 236 is formed on the portion of the transparent insulatinglayer 216 overlying the infrared radiation sensing device 214 tocomplete a semiconductor device 240. In some examples, the operation offorming the infrared radiation color filter layer 236 is performed toform the infrared radiation color filter layer 236 which is adjacent tothe stacked structure composed of the infrared radiation cut layer 224and the color filter layer 232. The operation of forming the infraredradiation color filter layer 236 may be performed to form the infraredradiation color filter layer 236 having a top surface 238 which may besubstantially level with a top surface 234 of the color filter layer232. In some examples, the operation of forming the color filter layer232 may be performed after the operation of forming the infraredradiation color filter layer 236.

In accordance with an embodiment, the present disclosure discloses asemiconductor device. The semiconductor device includes a substrate,light sensing devices, at least one infrared radiation sensing device, atransparent insulating layer, an infrared radiation cut layer, a colorfilter layer and an infrared radiation color filter layer. The lightsensing devices are disposed in the substrate. The at least one infraredradiation sensing device is disposed in the substrate, in which thelight sensing devices and the at least one infrared radiation sensingdevice are adjacent to each other. The transparent insulating layer isdisposed on the substrate and overlies the light sensing devices and theat least one infrared radiation sensing device. The infrared radiationcut layer is disposed on the transparent insulating layer and overliesthe light sensing devices for filtering out infrared radiation and/ornear infrared radiation. The color filter layer is disposed on theinfrared radiation cut layer. The infrared radiation color filter layeris disposed on the transparent insulating layer and overlies the atleast one infrared radiation sensing device.

In accordance with another embodiment, the present disclosure disclosesa semiconductor device. The semiconductor device includes a carrier, asemiconductor layer, light sensing devices, at least one infraredradiation sensing device, a dielectric layer, a transparent insulatinglayer, an infrared radiation cut layer, a color filter layer and aninfrared radiation color filter layer. The semiconductor layer isoverlying the carrier, in which the semiconductor layer has a firstsurface and a second surface opposite to the first surface. The lightsensing devices and the at least one infrared radiation sensing deviceare disposed on the first surface of the semiconductor layer. Thedielectric layer is disposed between the carrier and the first surfaceof the semiconductor layer and covers the light sensing devices and theat least one infrared radiation sensing device. The transparentinsulating layer is disposed on the second surface of the semiconductorlayer. The infrared radiation cut layer is disposed on the transparentinsulating layer overlying the light sensing devices for filtering outinfrared radiation and/or near infrared radiation. The color filterlayer is disposed on the infrared radiation cut layer. The infraredradiation color filter layer is disposed on the transparent insulatinglayer overlying the at least one infrared radiation sensing device.

In accordance with yet another embodiment, the present disclosurediscloses a method for manufacturing a semiconductor device. In thismethod, a substrate is provided. Light sensing devices and at least oneinfrared radiation sensing device are formed in the substrate, in whichthe light sensing devices and the at least one infrared radiationsensing device are adjacent to each other. A transparent insulatinglayer is formed on the substrate overlying the light sensing devices andthe at least one infrared radiation sensing device. An infraredradiation cut layer is formed on the transparent insulating layer forfiltering out infrared radiation and/or near infrared radiation. Aportion of the infrared radiation cut layer overlying the at least oneinfrared radiation sensing device is removed to expose a portion of thetransparent insulating layer. A color filter layer is formed on theother portion of the infrared radiation cut layer. An infrared radiationcolor filter layer is formed on the portion of the transparentinsulating layer overlying the at least one infrared radiation sensingdevice.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;a plurality of light sensing devices disposed in the substrate; at leastone infrared radiation sensing device disposed in the substrate, whereinthe light sensing devices and the at least one infrared radiationsensing device are adjacent to each other; a transparent insulatinglayer on the substrate overlying the light sensing devices and the atleast one infrared radiation sensing device; an infrared radiation cutlayer on the transparent insulating layer overlying the light sensingdevices for filtering out infrared radiation and/or near infraredradiation; a color filter layer on the infrared radiation cut layer; andan infrared radiation color filter layer on the transparent insulatinglayer overlying the at least one infrared radiation sensing device. 2.The semiconductor device of claim 1, further comprising a negativelycharged optical layer disposed between the substrate and the transparentinsulating layer.
 3. The semiconductor device of claim 2, wherein thenegatively charged optical layer is formed from hafnium dioxide (HaO₂),tantalum pentoxide (Ta₂O₅), titanium dioxide (TiO₂) or aluminum oxide(Al₂O₃).
 4. The semiconductor device of claim 1, further comprising agrid layer disposed in the transparent insulating layer, wherein thegrid layer is located between the light sensing devices and between theat least one infrared radiation sensing device and the light sensingdevices.
 5. The semiconductor device of claim 4, wherein the grid layeris formed form tungsten (W) or aluminum-copper alloy (AlCu).
 6. Thesemiconductor device of claim 1, wherein the infrared radiation cutlayer comprises a plurality of first dielectric layers and a pluralityof second dielectric layers alternately stacked with each other, and adielectric constant of the first dielectric layers is different from adielectric constant of the second dielectric layers.
 7. Thesemiconductor device of claim 1, wherein a top surface of the colorfilter layer is substantially level with a top surface of the infraredradiation color filter layer.
 8. The semiconductor device of claim 1,wherein a thickness of the infrared radiation cut layer is smaller than1 micrometer.
 9. A semiconductor device, comprising: a carrier; asemiconductor layer overlying the carrier, wherein the semiconductorlayer has a first surface and a second surface opposite to the firstsurface; a plurality of light sensing devices and at least one infraredradiation sensing device disposed on the first surface of thesemiconductor layer; a dielectric layer disposed between the carrier andthe first surface of the semiconductor layer and covering the lightsensing devices and the at least one infrared radiation sensing device;a transparent insulating layer on the second surface of thesemiconductor layer; an infrared radiation cut layer on the transparentinsulating layer overlying the light sensing devices for filtering outinfrared radiation and/or near infrared radiation; a color filter layeron the infrared radiation cut layer; and an infrared radiation colorfilter layer on the transparent insulating layer overlying the at leastone infrared radiation sensing device.
 10. The semiconductor device ofclaim 9, further comprising a negatively charged optical layer disposedbetween the substrate and the transparent insulating layer.
 11. Thesemiconductor device of claim 9, further comprising a grid layerdisposed in the transparent insulating layer, wherein the grid layer islocated between the light sensing devices and between the at least oneinfrared radiation sensing device and the light sensing devices.
 12. Thesemiconductor device of claim 9, wherein the infrared radiation cutlayer comprises a plurality of first dielectric layers and a pluralityof second dielectric layers alternately stacked with each other, and adielectric constant of the first dielectric layers is different from adielectric constant of the second dielectric layers.
 13. A method formanufacturing a semiconductor device, the method comprising: providing asubstrate; forming a plurality of light sensing devices and at least oneinfrared radiation sensing device in the substrate, wherein the lightsensing devices and the at least one infrared radiation sensing deviceare adjacent to each other; forming a transparent insulating layer onthe substrate overlying the light sensing devices and the at least oneinfrared radiation sensing device; forming an infrared radiation cutlayer on the transparent insulating layer for filtering out infraredradiation and/or near infrared radiation; removing a portion of theinfrared radiation cut layer overlying the at least one infraredradiation sensing device to expose a portion of the transparentinsulating layer; forming a color filter layer on the other portion ofthe infrared radiation cut layer; and forming an infrared radiationcolor filter layer on the portion of the transparent insulating layeroverlying the at least one infrared radiation sensing device.
 14. Themethod of claim 13, before the operation of forming the transparentinsulating layer, further comprising forming a negatively chargedoptical layer on the substrate overlying the light sensing devices andthe at least one infrared radiation sensing device.
 15. The method ofclaim 14, wherein the operation of forming the negatively chargedoptical layer comprises forming the negatively charged optical layerfrom hafnium dioxide, tantalum pentoxide, titanium dioxide or aluminumoxide.
 16. The method of claim 13, before the operation of forming theinfrared radiation cut layer, further comprising forming a grid layerdisposed in the transparent insulating layer, wherein the grid layer islocated between the light sensing devices and between the at least oneinfrared radiation sensing device and the light sensing devices.
 17. Themethod of claim 16, wherein the operation of forming the grid layercomprises forming the grid layer form tungsten or aluminum-copper alloy.18. The method of claim 13, wherein the operation of forming theinfrared radiation cut layer comprises forming the infrared radiationcut layer comprising a plurality of first dielectric layers and aplurality of second dielectric layers alternately stacked with eachother, and a dielectric constant of the first dielectric layers isdifferent from a dielectric constant of the second dielectric layers.19. The method of claim 13, wherein the operation of forming the colorfilter layer comprises forming the color filter layer having a topsurface which is substantially level with a top surface of the infraredradiation color filter layer.
 20. The method of claim 13, wherein theoperation of forming the infrared radiation cut layer comprises formingthe infrared radiation cut layer having a thickness which is smallerthan 1 micrometer.